tm august 2007 FDP8443 n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDP8443 rev. a www.fairchildsemi.com 1 FDP8443 n-channel powertrench ? mosfet 40v, 80a, 3.5 m features ? typ r ds(on) = 2.7m at v gs = 10v, i d = 80a ? typ q g(10) = 142nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter / alternator ? distributed power architecture and vrms ? primary switch for 12v systems
FDP8443 n-channel powertrench ? mosfet FDP8443 rev. a www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (t c < 144 o c, v gs = 10v) 80 a continuous (t amb = 25 o c, v gs = 10v, with r ja = 62 o c/w) 20 pulsed see figure 4 e as single pulse avalanche energy (note 1) 531 mj p d power dissipation 188 w derate above 25 o c1.25w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance junction to case 0.8 o c/w r ja thermal resistance junction to ambient (note 2) 62 o c/w package marking and ordering information device marking device package reel size tape width quantity FDP8443 FDP8443 to-220ab tube n/a 50 units electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v, - - 1 a v gs = 0v t c = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.84v r ds(on) drain to source on resistance i d = 80a, v gs = 10v - 2.7 3.5 m i d = 80a, v gs = 10v, t j = 175 o c -4.76.1 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 9310 - pf c oss output capacitance - 800 - pf c rss reverse transfer capacitance - 510 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 0.9 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 35a i g = 1ma - 142 185 nc q g(th) threshold gate charge v gs = 0 to 2v - 17.5 23 nc q gs gate to source gate charge -36-nc q gs2 gate charge threshold to plateau - 18.8 - nc q gd gate to drain ?miller? charge - 32 - nc
FDP8443 n-channel powertrench ? mosfet FDP8443 rev. a www.fairchildsemi.com 3 electrical characteristics t c = 25 o c unless otherwise noted switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 0.26mh, i as = 64a. 2: pulse width = 100s. symbol parameter test conditions min typ max units t on turn-on time v dd = 20v, i d = 35a v gs = 10v, r gs = 2 - - 58 ns t d(on) turn-on delay time - 18.4 - ns t r rise time - 17.9 - ns t d(off) turn-off delay time - 55 - ns t f fall time - 13.5 - ns t off turn-off time - - 109 ns v sd source to drain diode voltage i sd = 35a - 0.8 1.25 v i sd = 15a - 0.8 1.0 t rr reverse recovery time i sd = 35a, di sd /dt = 100a/ s -4255ns q rr reverse recovery charge - 48 62 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
FDP8443 n-channel powertrench ? mosfet FDP8443 rev. a www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) 25 50 75 100 125 150 175 0 40 80 120 160 200 current limited by package v gs = 10v t c , case temperature ( o c ) i d , drain current (a) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 5000 t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDP8443 n-channel powertrench ? mosfet FDP8443 rev. a www.fairchildsemi.com 5 figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. transfer characteristics figure 8. saturation characteristics figure 9. drain to source on-res i stance variation vs gate to source voltage figure 10. normalized drain to source on resistance vs junction temperature typical characteristics 110100 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 0.01 0.1 1 10 100 1000 1 10 100 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) 012345 0 40 80 120 160 200 v gs = 5v i d , drain current (a) v ds , drain to source voltage (v) v gs = 4v v gs = 4.5v v gs = 10v pulse duration = 80 s duty cycle = 0.5% max 345678910 0 20 40 60 80 r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage ( v ) i d = 80a t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c )
FDP8443 n-channel powertrench ? mosfet FDP8443 rev. a www.fairchildsemi.com 6 figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge vs gate to source voltage typical characteristics -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c ) 0.1 1 10 100 1000 10000 20000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) 50 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 i d = 35a v dd = 25v v dd = 20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v
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